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1 memory all data sheets are subject to change without notice (858) 503-3300 - fax: (858) 503-3301 - www.maxwell.com 1 megabit (128k x 8-bit) - otp eprom 27c010t ?2001 maxwell technologies all rights reserved. 12.12.01 rev 2 f eatures : ? 128k x 8 bit otp eprom organization ?r ad -p ak ? radiation-hardened against natural space radia- tion ? total dose hardness: - >100 krad (si), depending upon space mission ? excellent single event effects: - sel th let: > 80 mev/mg/cm 2 - seu th let (read mode): >80 mev/mg/cm 2 ? package: - 32 pin r ad -p ak ? flat pack - weight - 6.0 grams ? fast access time: - 120, 150, 200 ns (max) times available ? low power consumption: - active mode: 50 mw/mhz (typ) - standby mode: 5w (typ) ? high speed page and word programming: - page programming time: 14 sec (typ) ? programming power supply: - v pp = 12.5 v 0.3 v ? one-time programmable ? pin arrangement - jedec standard byte-wide eprom - flash memory and mask rom compatible d escription : maxwell technologies ? 27c010t high density 1 megabit one-time programmable elec trically programmable read only memory microcircuit features a greater than 100 krad (si) total dose tolerance, depending upon space mission. the 27c010t features fast address times and low power dissipa- tion. the 27c010t offers hi gh speed programming using page programming mode. the 27c010t is offered in jedec-stan- dard byte-wide eprom pinouts, wh ich allows socket replace- ment with flash memory and mask roms. maxwell technologies' patented r ad -p ak ? packaging technol- ogy incorporates radiation shie lding in the microcircuit pack- age. it eliminates the need for box shielding while providing the required radiation shielding fo r a lifetime in orbit or space mission. in a geo orbit, r ad -p ak provides greater than 100 krad (si) radiation dose toleranc e. this product is available with screening up to class s. 1024 x 1024 memory matrix x-decoder input data control y-gating y-decoder h h : high threshold inverter v ss v pp v cc pgm oe ce i/o7 i/o0 a16 a12 a9 a5 a0-a4 a10-a11 1 16 17 32 v cc pgm nc a14 a13 a8 a9 a11 oe a10 ce i/o7 i/o6 i/o5 i/o4 i/o3 v ss i/o2 i/o1 i/o0 a1 a0 a2 a3 a4 a5 a6 a7 a12 a15 a16 v pp 27c010t logic diagram
memory 2 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 t able 1. 27c010t p inout d escription p in s ymbol d escription 12-5, 27, 26, 23, 25, 4, 28, 29, 3 ,2 a0 - a16 address i/o0 - i/o7 input/output 22 ce chip enable 24 oe output enable 32 v cc power supply 1v pp programming supply 16 v ss ground 31 pgm programming enable 30 nc no connection t able 2. 27c010t a bsolute m aximum r atings p arameter s ymbol m in m ax u nit supply voltage 1 1. relative to v ss . v cc -0.6 7.0 v programming voltage 1 v pp -0.6 13.5 v all input and output voltage 1,2 2. v in , v out , and v id min = -1.0v for pulse width < 20 ns. v in , v out -0.6 7.0 v a9 voltage 2 v id -0.6 13.0 v operating temperature range t a -55 +125 c storage temperature range t s -65 +150 c t able 3. d elta l imits p arameter v ariation i cc 1 10% of value specified on table 6 i cc 2 10% of value specified on table 6 i cc 3 10% of value specified on table 6 isb 10% of value specified on table 6
memory 3 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 t able 4. 27c010t r ecommended o perating c onditions p arameter s ymbol m in m ax u nits supply voltage v cc 4.5 5.5 v input voltage v il -0.3 1 1. v il min = -1.0v for pulse width < 50 ns. 0.8 v v ih 2.2 v cc +1 2 2. v ih max = v cc + 1.5v for pulse width < 20 ns. thermal impedance jc -- 1.27 c/w operating temperature range t a -55 +125 c t able 5. 27c010t c apacitance 1 1. guaranteed by design. p arameter s ymbol m in m ax u nit input capacitance c in -- 10 pf output capacitance c out -- 15 pf t able 6. 27c010t dc e lectrical c haracteristics for r ead o peration (v cc = 5v 10%, v pp = v ss , t a = -55 to +125 c, unless otherwise specified ) p arameter s ymbol t est c ondition s ub g roups m in t yp m in u nit input leakage current i li v in = 5.5v 1, 2, 3 -- -- 2 a output leakage current i lo v out = 5.5v/0.45v 1, 2, 3 -- -- 2 a standby v cc current i sb ce = v ih 1, 2, 3 -- -- 1 ma operating v cc current i cc1 i out = 0 ma, ce = v il 1, 2, 3 -- -- 30 ma i cc2 i out = 0 ma, f = 5 mhz 1, 2, 3 -- -- 30 i cc3 i out = 0 ma, f = 10 mhz 1, 2, 3 -- -- 50 v pp current i pp1 v pp = 5.5v 1, 2, 3 -- 1 20 a input voltage v ih 1, 2, 3 2.2 -- -- v v il 1, 2, 3 -- -- 0.8 output voltage v oh i oh = -400 a 1, 2, 3 2.4 -- -- v v ol i ol = 2.1 ma 1, 2, 3 -- -- 0.45
memory 4 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 t able 7. 27c010t ac e lectrical c haracteristics for r ead o peration 1 (v cc = 5v 10%, v pp = v ss , t a = -55 to +125 c, unless otherwise specified ) 1. test conditions: - input pulse levels 0.45v/2.4v - input rise and fall times < 10 ns - output load 1 ttl gate + 100 pf (including scope and jig) - referenced levels for measuring timing 0.8v/2.0v p arameter t est c ondition s ymbol s ub g roups m in m ax u nit address access time - 120 - 150 - 200 ce = oe = v il t acc 9, 10, 11 -- -- -- 120 150 200 ns chip enable access time - 120 - 150 - 200 oe = v il t ce 9, 10, 11 -- -- -- 120 150 200 ns output enable access time - 120 - 150 - 200 ce = v il t oe 9, 10, 11 -- -- -- 60 70 70 ns output hold to address change - 120 - 150 - 200 ce = v il t oh 9, 10, 11 0 0 0 -- -- -- ns output disable to high-z 2 - 120 - 150 - 200 2. t df is defined as the time at which the output becomes an open circuit and data is no longer driven. ce = oe = v il t df 9, 10, 11 0 0 0 50 50 50 ns
memory 5 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 t able 8. 27c010t dc e lectrical c haracteristics for p rogramming o perations 1,2,3,4 (v cc = 6.25v + 0.25v, v pp = 12.5v + 0.3v, t a = 25 c) 1. v cc must be applied before v pp and removed after v pp . 2. v pp must not exceed 13v, inlcuding overshoot. 3. do not change v pp from v il to 12.5v or 12.5v to v il when ce =low. 4. dc electrical paramters for progr amming operations are not tested. t hese parameters are guaranteed by design. p arameter s ymbol t est c ondition s ub g roups m in m ax u nit input leakage current i li v in = 0v to v cc 1, 2, 3 -- 2 a operating v cc current i cc 1, 2, 3 -- 30 ma operating v pp current i pp ce = pgm = v il 1, 2, 3 -- 40 ma input voltage 5 5. device reliability may be adversely affected if the device is installed or removed while v pp = 12.5v. v ih 1, 2, 3 2.2 v cc +5 6 6. if v ih is over the specified maximum value, programming operation can not be guaranteed. v v il 1, 2, 3 -0.1 7 7. v il min = -0.6v for pulse width < 20 ns. 0.8 output voltage v oh i oh = -400 a 1, 2, 3 2.4 -- v v ol i oh = 2.1 ma 1, 2, 3 -- 0.45 t able 9. 27c010t ac e lectrical c haracteristics for p rogramming o perations 1,2 (v cc = 6.25v + 0.25v, v pp = 12.5v 0.3v, t a = 25 c) p arameter s ymbol s ub g roups m in t yp m ax u nit address setup time t as 9, 10, 11 2 -- -- s address hold time t ah 9, 10, 11 0 -- -- s data setup time t ds 9, 10, 11 2 -- -- s data hold time t dh 9, 10, 11 2 -- -- s chip enable setup time t ces 9, 10, 11 2 -- -- s v pp setup time t vps 9, 10, 11 2 -- -- s v cc setup time t vcs 9, 10, 11 2 -- -- s output enable setup time t oes 9, 10, 11 2 -- -- s output disable time t df 9, 10, 11 0 -- 130 ns pgm initial programming pulse width t pw 9, 10, 11 0.19 0.20 0.21 ms pgm overprogramming pulse width t opw 9, 10, 11 0.19 -- 5.25 ms data valid from output enable time t oe 9, 10, 11 0 -- 150 ns output enable pulse during data latch t lw 9, 10, 11 1 -- -- s output enable hold time t oeh 9, 10, 11 2 -- -- s chip enable hold time t ceh 9, 10, 11 2 -- -- s
memory 6 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 pgm setup time t pgms 9, 10, 11 2 -- -- s 1. test conditions: - input pulse levels 0.45v / 2.4v - input rise and fall times < 20 ns - referenced levels for measuring timing 0.8v/2.0v 2. ac electrical parameters for programming operation are not test ed. these are guaranteed by design. t able 10. 27c010t m ode s election 1,2 m ode v pp v cc ce oe pgm a 0 i/o r ead v cc v cc v il v il v pp xd out o utput d isable v cc v cc v il v ih v ih x high-z s tandby v cc v cc v ih x x x high-z p rogram v pp v cc v il v in v il xd in p rogram v erify v pp v ss v il v il v ih xd out p age d ata l atch v pp v cc v ih v il v ih xd in p age p rogram v pp v cc v ih v ih v il x high-z p rogram i nhibit v cc v cc v il v il v il x high-z v pp v cc v il v ih v ih x high-z v pp v cc v ih v il v il x high-z v pp v cc v ih v ih v ih x high-z i dentifier v cc v cc v il v il v ih v ih id 1. x = don?t care. 2. 11.5v < v h < 12.5v. t able 9. 27c010t ac e lectrical c haracteristics for p rogramming o perations 1,2 (v cc = 6.25v + 0.25v, v pp = 12.5v 0.3v, t a = 25 c) p arameter s ymbol s ub g roups m in t yp m ax u nit
memory 7 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 f igure 1. r ead t iming w aveform f igure 1.
memory 8 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 f igure 2. b yte p rogramming f lowchart
memory 9 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 f igure 3. b yte p rogramming t iming w aveform
memory 10 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 f igure 4. p age p rogramming f lowchart
memory 11 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 f igure 5. p age p rogramming t iming w aveform
memory 12 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 f32-09 note: all dimensions in inches 32 p in r ad -p ak ? f lat p ackage s ymbol d imension m in n om m ax a 0.194 0.207 0.220 b 0.015 0.017 .002 0.019 c 0.004 0.005 0.007 d 0.812 0.820 0.828 e 0.474 0.480 0.486 e1 -- -- 0.498 e2 0.304 0.310 0.316 e3 0.030 0.085 -- e 0.050 bsc l 0.370 0.380 0.390 q 0.067 0.070 0.073 s1 0.005 0.027 -- n32 32ldfp
memory 13 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) - otp eprom 27c010t 12.12.01 rev 2 important notice: these data sheets are created using the chip manufacturer?s published specifications. maxwell technologies verifies functionality by testing key parameters either by 100% testing, sample test ing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these specifications are subject to change without notice and maxwell technologies assumes no responsibility for the us e of this information. maxwell technologies? products are not authorized for use as critical components in life support devices or systems without express written approval from maxwell technologies. any claim against maxwell technologies must be made within 90 days from the date of shipment from maxwell tech- nologies. maxwell technologies? liability shall be limited to replacement of defective parts.

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